M-MOS, we actively pursue our role as a discrete power MOSFET supplier utilizing leading edge technology and manufacturing facilities to produce quality and innovative products that will provide sustainable added values to the customers. M-MOS utilizes the leading edge sub-micro MOSFET process with 200mm technology to achieve better performance and provides a more cost effective solution. The proprietary 750 Mcell/in 2 technology will shrink the Power MOSFET devices for better RDS(on) performance.

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Key Features

Discrete Low Voltage MOSFET:

  • Leading edge sub micro trench technology with 750Mcell/in2 technology resulting in lower die size and cost
  • Low RDSon technology to minimise conductive losses
  • Low leakage current
  • 150°C or 175°C junction temperature
  • High immunity to dynamic turn-on

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Career Opportunities