Milestones

Introduction

M-MOS develops MOSFET process technologies and designs standard and custom devices with the technologies.

M-MOS unique business model for MOSFET is to focus on selling WAFERS to its customers.

M-MOS specializes in guaranteeing maximum quality on wafer level, so that its customers can concentrate on their core business (packaging, marketing and sales of MOSFET discrete devices).

Home > About M-MOS > Milestones

Year 2004	Initial Capital Raised and Company Registered for M-MOS Semiconductor Sdn. Bhd. Design and Prototype Started on 200mm Technology with 0.2um trench
Year 2005	Proven 500 Mcell/in² technology for low Voltage (<50V) N and P Channels 1^st Product Launching in 2Q05 Mass production started in 4Q05 Total 7 products launched in 2005
Year 2006	ISO9001 :2000 Audit and Certification Development of 500M Cell/in² low voltage (40V – 75V) Trench MOSFET Monolithically integrated MOSFET with ESD
Year 2007	Production ramp up to >6Kwafers/month Total 58 products launched to date
Year 2008	Company Registration for M-MOS Semiconductor Hong Kong Ltd. as headquarters and subsidiary of Xtrion N.V. 22 new products introduced in 2008 Officially setup M-MOS Semiconductor Sdn. Bhd. as subsidiary of M-MOS Semiconductor Hong Kong Ltd. Setup M-MOS Semiconductor Hong Kong Ltd., Taiwan Branch.
Year 2009	ISO9001 :2008 Audit and Certification Started development of automotive quality MOSFET and 600V IGBT, target to be released in 2010 11 new products introduced in 2009 Release next generation products with improved specific Rdson and further die size shrink