- Release CSP common drain and single chip technology
- Release Low Qg technology (≤30V) N channel in production
- Customize projects launched and moved into production
- Development of deep trench process which enables the capability of manufacturing Chip Scale Package
- Development of Solid State Relay technology
- Development of low Qg technology (≤30V) with Thick Bottom Oxide and Shallow Trench
- Development of Stripe Cell Technology for 55V ~ 100V N-Channel Trench MOSFET
- Development of Fast Switching ESD devices
- Development of 2nd generation technology (650Mcell/in2) with improved specific Rdson and further die size shrink
- ISO9001 :2008 Audit and Certification
- Started development of automotive quality MOSFET and 600V IGBT, target to be released in 2010
- 11 new products introduced in 2009
- Release next generation products with improved specific Rdson and further die size shrink
- Company Registration for M-MOS Semiconductor Hong Kong Ltd. as headquarters and subsidiary of Xtrion N.V.
- 22 new products introduced in 2008
- Officially setup M-MOS Semiconductor Sdn. Bhd. as subsidiary of M-MOS Semiconductor Hong Kong Ltd.
- Setup M-MOS Semiconductor Hong Kong Ltd., Taiwan Branch.
- Production ramp up to >6Kwafers/month
- Total 58 products launched to date
- ISO9001 :2000 Audit and Certification
- Development of 500M Cell/in² low voltage (40V – 75V) Trench MOSFET
- Monolithically integrated MOSFET with ESD
- Proven 500 Mcell/in² technology for low Voltage ( <50V) N and P Channels
- 1st Product Launching in 2Q05
- Mass production started in 4Q05
- Total 7 products launched in 2005
- Initial Capital Raised and Company Registered for M-MOS Semiconductor Sdn. Bhd.
- Design and Prototype Started on 200mm Technology with 0.2um trench