M-MOS is qualifying an automotive MOSFET technology where its state-of-the-art low R dson capabilities are combined with highest level of reliability.<\/p>\n
<\/a> [\/et_pb_text][\/et_pb_column][\/et_pb_row][et_pb_row admin_label=”Row” _builder_version=”3.25″ background_size=”initial” background_position=”top_left” background_repeat=”repeat” global_colors_info=”{}”][et_pb_column type=”4_4″ _builder_version=”3.25″ custom_padding=”|||” global_colors_info=”{}” custom_padding__hover=”|||”][et_pb_accordion admin_label=”Technology features” _builder_version=”4.14.7″ toggle_font=”|on|||” hover_enabled=”0″ custom_css_main_element=”font-size: 16px;” use_border_color=”off” border_color=”#ffffff” border_style=”solid” global_colors_info=”{}” sticky_enabled=”0″][et_pb_accordion_item title=”Chip Scale Package (CSP) technology ” open=”off” _builder_version=”3.0.47″ global_colors_info=”{}”]Chip Scale Package (CSP) technology\u00a0gives much lower Rdson per footprint as compared to fixed dimension of standard package.\u00a0 Besides the advantage in footprint reduction, Flip Chip device also shows reduced source inductance though direct mounting of the die on the circuit board, better thermal resistance and lower cost by getting rid of back-grinding process. The thick bottom oxide (TBO) technology is target to reduce the QG performance with relatively low cost\u00a0 compared to other technologies by optimizing the design structures.<\/p>\n [\/et_pb_accordion_item][et_pb_accordion_item title=”Shielded Gate (Maximos Series)” _builder_version=”4.14.7″ hover_enabled=”0″ global_colors_info=”{}” open=”off” sticky_enabled=”0″]<\/p>\n Our new product series (Maximos series).\u00a0 The shielded Gate Technology aims to have low RDS(ON), low FOM, and fast switching performance.<\/p>\n [\/et_pb_accordion_item][et_pb_accordion_item title=”Fast Switching ESD Technology ” _builder_version=”3.0.47″ global_colors_info=”{}” open=”off”]Fast Switching ESD Technology aims to have good ESD performance without jeopardizing the switching capability. Technology & Features At M-MOS, we actively pursue our role as a discrete power MOSFET supplier utilizing leading edge technology and manufacturing facilities to produce quality and innovative products that will provide sustainable added values to the customers. M-MOS utilizes the leading edge sub-micro MOSFET process with 200mm technology to achieve better performance and provides […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"on","_et_pb_old_content":"","_et_gb_content_width":""},"_links":{"self":[{"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/pages\/102"}],"collection":[{"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/comments?post=102"}],"version-history":[{"count":20,"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/pages\/102\/revisions"}],"predecessor-version":[{"id":640,"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/pages\/102\/revisions\/640"}],"wp:attachment":[{"href":"https:\/\/m-mos.com\/v3\/wp-json\/wp\/v2\/media?parent=102"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}![\"\"](\"https:\/\/m-mos.com\/v3\/wp-content\/uploads\/MMOS-Technology-Roadmap-2023.png\")
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\n[\/et_pb_accordion_item][et_pb_accordion_item title=”Rdson Improvement Projects ” _builder_version=”3.0.47″ global_colors_info=”{}” open=”off”]Rdson Improvement Projects\u00a0are mainly focus on enhancement on existing products with different process approaches such as shallow trench and low ohmic substrate.
\n[\/et_pb_accordion_item][et_pb_accordion_item title=”Low Qg (Thick Bottom Oxide)” _builder_version=”4.14.7″ hover_enabled=”0″ global_colors_info=”{}” open=”on” sticky_enabled=”0″]<\/p>\n
\n[\/et_pb_accordion_item][et_pb_accordion_item title=”Solid State Relay (SSR)” _builder_version=”3.0.47″ global_colors_info=”{}” open=”off”]Solid State Relay (SSR) is our new product line.\u00a0 The application is similar to power switch.
\n[\/et_pb_accordion_item][et_pb_accordion_item title=”Gallium Nitride (GaN) ” _builder_version=”3.0.47″ global_colors_info=”{}” open=”off”]Gallium Nitride (GaN) was a hot topic in power discrete world for many years as silicon-based-power discrete is coming to its limitation.\u00a0 We believe GaN-based-power discrete will be the future trend as the cost of GaN-on-Si starting material is getting lower as the technology matures.
\n[\/et_pb_accordion_item][\/et_pb_accordion][\/et_pb_column][\/et_pb_row][\/et_pb_section]<\/p>\n","protected":false},"excerpt":{"rendered":"
![<\/a>](\"https:\/\/m-mos.com\/v3\/wp-content\/uploads\/technology1.png\"){kind=link}