- Release further more customized Automotive products
- Developing medium Voltage (up to 200V) trench MOSFET
- Developing Split Gate technology (SGT) N channel platform
- Launch Advance Low Rdson technology with 40% further reduction of Rdson for P channel prodcuts
- Release 3rd genration MOSFET with dynamic parameters improvement
- Launch Automotive products into production
- Release Fast Switching ESD platform to provide the excellent switching peromce and ESD protecting
- Release Low Qg technology (≤30V) N channel in production
- Release Stripe Cell Technology for 55V ~ 100V N-Channel Trench MOSFET
- Release CSP common drain and single chip technology
- Release SSR platform
- Customize projects launched and moved into production
- ISO9001 :2008 Audit and Certification
- Staring Automotive MOSFET platform installation
- Launch 2nd generation technology (650Mcell/in3) with improved specific Rdson and further die size shrink
- Development of low Qg technology (≤30V) with Thick Bottom Oxide and Shallow Trench
- Development of Stripe Cell Technology for 55V ~ 100V N-Channel Trench MOSFET
- Development of deep trench process which enables the capability of manufacturing Chip Scale Package
- Development of Solid State Relay technology.
- Company Registration become M-MOS Semiconductor Hong Kong Ltd. as headquarters and holding under Xtrion N.V.
- Officially setup M-MOS Semiconductor Sdn. Bhd. as subsidiary of M-MOS Semiconductor Hong Kong Ltd.
- Setup M-MOS Semiconductor Hong Kong Ltd., Taiwan Branch.
- ISO9001 :2000 Audit and Certification
- Development of 450M Cell/in² low voltage (40V – 76V) Trench MOSFET
- Monolithically integrated MOSFET with ESD
- Total 58 products launched to date
- Proven 450 Mcell/in² technology for low Voltage ( <50V) N and P Channels
- 1st Product Launching in 2Q05
- Mass production started in 4Q05
- Total 7 products launched in 2005
- Initial Capital Raised and Company Registered for M-MOS Semiconductor Sdn. Bhd.
- Design and Prototype Started on 200mm Technology with 0.2um trench
